Small angle scattering of synchrotron radiation on nanosized CeO2 and CeO2-SnO2 thin films obtained by sol-gel dip-coating method

Citation
A. Turkovic et al., Small angle scattering of synchrotron radiation on nanosized CeO2 and CeO2-SnO2 thin films obtained by sol-gel dip-coating method, NANOSTR MAT, 11(7), 1999, pp. 909-915
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOSTRUCTURED MATERIALS
ISSN journal
09659773 → ACNP
Volume
11
Issue
7
Year of publication
1999
Pages
909 - 915
Database
ISI
SICI code
0965-9773(199910)11:7<909:SASOSR>2.0.ZU;2-5
Abstract
Nanosized CeO2, and CeO2-SnO2, 100-500 nm thick, films on glass substrate w ere prepared using sol-gel dip-coating method procedure. The average grain size <R>, obtained by SAXS (small-angle X-ray scattering), varied with the number of dips for the CeO2-SnO2 samples. For the CeO2 films, obtained by d ipping it 8 times, <R> increased compared to CeO2-SnO2 films, which were ob tained by the same number of dips, from 4.4 to 5.3 nm. Specific surface are as of both these films were also determined and varied from 0.18 x 10(7) to 0.51 x 10(7) cm(-1). SAXS measurements also revealed the layered structure of CeO2 and CeO2-SnO2 firms. (C) 1999 Acta Metallurgica Inc.