Voltage-gated ion channels underlie the generation of action potentials and
trigger neurosecretion and muscle contraction. These channels consist of a
n inner pore-forming domain, which contains the ion permeation pathway and
elements of its gates, together with four voltage-sensing domains, which re
gulate the gates(1-6). To understand the mechanism of voltage sensing it is
necessary to define the structure and motion of the S4 segment, the portio
n of each voltage-sensing domain that moves charged residues across the mem
brane in response to voltage change(7-14) We have addressed this problem by
using fluorescence resonance energy transfer as a spectroscopic ruler(15-1
7) to determine distances between S4s in the Shaker K+ channel in different
gating states. Here we provide evidence consistent with S4 being a tilted
helix that twists during activation. We propose that helical twist contribu
tes to the movement of charged side chains across the membrane electric fie
ld and that it is involved in coupling voltage sensing to gating.