Bj. Zhao et al., Improved growth of AgGaSe2 crystals and phase matched second harmonic generation of 10.6 mu m CO2 laser radiation, OPT ENG, 38(12), 1999, pp. 2129-2133
Good quality AgGaSe2 single crystal 22 mm in diameter and 80 mm in length i
s grown by an improved technique, i.e., descending ampoule with rotation. A
lthough the crystals grow with optical defects, postgrowth heat treatment p
rocedures are used to successfully eliminate the defects and produce materi
al of 62.4% IR transmission at 10.6 mu m. The frequency-doubling device is
cut from a cylindrical crystal boule using a new orientation cut method acc
ording to the type-1 phase-matched condition. A high optical quality, orien
tated AgGaSe2 single crystal of 10 x 10 x 12 mm size is used for second har
monic generation (SHG) of the pulsed output of a 10.6 mu m CO2 miniature tr
ansversely excited atmospheric laser. A relatively high energy conversion e
fficiency of 12% is obtained. It is found that the optical surface damage t
hreshold of the crystal is larger than 12 MW/cm(2). (C) 1999 Society of Pho
to-Optical Instrumentation Engineers. [S0091-3286(99)00512-7].