Exciton energy structure in wurtzite GaN

Citation
Av. Rodina et al., Exciton energy structure in wurtzite GaN, PHYS ST S-B, 216(1), 1999, pp. 21-26
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
21 - 26
Database
ISI
SICI code
0370-1972(199911)216:1<21:EESIWG>2.0.ZU;2-M
Abstract
Results of theoretical and experimental magneto-optical studies of free exc itons in wurtzite GaN are presented. The direct photoluminescence from free exciton states of high-quality GaN epilayers was studied by polarization-d ependent magneto-optical measurements in magnetic fields up to 15 T. Zeeman splittings and diamagnetic shifts of the n = 1 and n = 2 slates of the A e xciton were observed for magnetic fields parallel and perpendicular to the hexagonal axis. The experimental data are described by a theory of the exci ton energy structure in hexagonal semiconductors with wurtzite symmetry in the framework of the quasi-cubic approximation.