Impact ionization of excitons in an electric field in GaN

Authors
Nelson, DK Jacobson, MA Kagan, VD Shmidt, M Gil, B Grandjean, N Massies, J
Citation
Dk. Nelson et al., Impact ionization of excitons in an electric field in GaN, PHYS ST S-B, 216(1), 1999, pp. 63-67
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
63 - 67
Database
ISI
SICI code
0370-1972(199911)216:1<63:IIOEIA>2.0.ZU;2-3
Abstract
Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ion ization of excitonic states by hot electrons. It is found that impurity sca ttering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons l(eff) is estimated. The value of l(eff) for quantum wells appears to be one order o f magnitude larger than that for epitaxial films.