Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy

Authors
Buyanova, IA Chen, WM Pozina, G Monemar, B Xin, HP Tu, CW
Citation
Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
125 - 129
Database
ISI
SICI code
0370-1972(199911)216:1<125:MFLEIG>2.0.ZU;2-Q
Abstract
A detailed photoluminescence (PL) study reveals that the low-temperature PL emission in GaNAs epilayers and GaAs/GaNxAs1-x quantum well structures gro wn by molecular beam epitaxy is governed by recombination of localized exci tons. This conclusion is based on the analysis of the PL lineshape, its dep endence on the excitation power and measurement temperature, as well as PL transient data. The depth of the localization potential is estimated as abo ut 60 meV, varying slightly among the different structures.