k center dot P model of ordered GaNxAs1-x

Authors
O'Reilly, EP Lindsay, A
Citation
Ep. O'Reilly et A. Lindsay, k center dot P model of ordered GaNxAs1-x, PHYS ST S-B, 216(1), 1999, pp. 131-134
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
131 - 134
Database
ISI
SICI code
0370-1972(199911)216:1<131:KCDPMO>2.0.ZU;2-M
Abstract
We present a three-band k.P Hamiltonian to describe the conduction band dis persion of ordered GaNxAs1-x crystals for low N concentrations (x less than or similar to 0.05). The model includes interactions between the highest v alence band, lowest conduction band and a higher-lying band formed by N res onant states. The k.P conduction band dispersion is in excellent agreement with full tight-binding calculations, and can be used as a basis for a wide range of studies of Ga1-yInyNxAs1-x heterostructures and devices.