Photoluminescence excitation spectrum study on GaN/Al0.15Ga0.85N MQWs

Authors
Nishida, T Kumagai, M Ando, H Kobayashi, N
Citation
T. Nishida et al., Photoluminescence excitation spectrum study on GaN/Al0.15Ga0.85N MQWs, PHYS ST S-B, 216(1), 1999, pp. 233-236
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
233 - 236
Database
ISI
SICI code
0370-1972(199911)216:1<233:PESSOG>2.0.ZU;2-6
Abstract
To clarify the subband profile of nitride quantum structures, we performed photoluminescence excitation spectrum measurements of GaN/Al0.15Ga0.85N mul tiquantum well structures grown by metalorganic Vapor phase epitaxy on an o n-axis 6H-SiC(0001)(Si) substrate. Clear absorption due to the ground state is confirmed. Further, two types of absorption related to the excited stat es of the nitride quantum wells are found.