Polarization induced charge at heterojunctions of the III-V nitrides and their alloys

We examine the bound charge present when the III-nitride alloys, AlGaN, InG aN, and AlInN, are pseudomorphically grown on templates of relaxed GaN, InN , and AIN epitaxial layers. The advantages of yet unrealized heterojunction s, such as AIInN/InN, are compared with the more common AlGaN/GaN heterojun ction. Special attention is paid to AlInN/GaN where a lattice matched and a zero total bound charge heterojunction are possible.