We examine the bound charge present when the III-nitride alloys, AlGaN, InG
aN, and AlInN, are pseudomorphically grown on templates of relaxed GaN, InN
, and AIN epitaxial layers. The advantages of yet unrealized heterojunction
s, such as AIInN/InN, are compared with the more common AlGaN/GaN heterojun
ction. Special attention is paid to AlInN/GaN where a lattice matched and a
zero total bound charge heterojunction are possible.