Screening of the polarization field in InGaN single quantum wells

Authors
Harris, JC Kako, S Someya, T Arakawa, Y
Citation
Jc. Harris et al., Screening of the polarization field in InGaN single quantum wells, PHYS ST S-B, 216(1), 1999, pp. 423-426
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
423 - 426
Database
ISI
SICI code
0370-1972(199911)216:1<423:SOTPFI>2.0.ZU;2-M
Abstract
We report time-resolved photoluminescence measurements on InxGa1-xN/InyGa1- yN single quantum wells with different levels of silicon doping. Remarkable decay behaviour is observed in samples with zero or low doping and at high excitation powers: carrier lifetimes which decrease with time after the la ser pulse. The results can be attributed to photoexcited carriers giving ti me-dependent screening of the polarization field and to doping giving perma nent screening.