Optical properties of nitride quantum wells: How to separate fluctuations and polarization field effects

Citation
A. Hangleiter et al., Optical properties of nitride quantum wells: How to separate fluctuations and polarization field effects, PHYS ST S-B, 216(1), 1999, pp. 427-430
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
427 - 430
Database
ISI
SICI code
0370-1972(199911)216:1<427:OPONQW>2.0.ZU;2-E
Abstract
Both the large linewidth of optical transitions as well as the sizeable "St okes'' shift seem to suggest strong localization effects in nitride quantum wells. In contrast, we clearly show that the "Stokes" shift can be easily understood in terms of the huge piezoelectric fields present in such struct ures. At the same time, those fields lead to a characteristic dependence of the linewidth on well width, which we use to quantitatively separate fluct uation and field effects. We find that in high-quality quantum wells, the r elative compositional fluctuation is less than 10% and the well width fluct uation is of the order 1 monolayer.