Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature

Authors
Krestnikov, IL Lundin, WV Sakharov, AV Semenov, VA Usikov, AS Tsatsulnikov, AF Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation
Il. Krestnikov et al., Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature, PHYS ST S-B, 216(1), 1999, pp. 511-515
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
511 - 515
Database
ISI
SICI code
0370-1972(199911)216:1<511:PIVCSE>2.0.ZU;2-9
Abstract
Room temperature operation in the wavelength range of 401 to 415 nm has bee n successfully realized in InGaN/GaN/AlGaN vertical cavity surface emitting lasers (VCSELs) under photoexcitation. The VCSELs are grown by metal-organ ic vapor phase deposition and composed of a 2 lambda vertical cavity includ ing twelvefold stacked multiple InGaN insertions in a GaN matrix grown on t op of a quarter-wave strain-compensated Al0.15Ga0.85N/GaN distributed Bragg reflector.