The origin of red luminescence from Mg-doped GaN

Authors
Bayerl, MW Brandt, MS Glaser, ER Wickenden, AE Koleske, DD Henry, RL Stutzmann, M
Citation
Mw. Bayerl et al., The origin of red luminescence from Mg-doped GaN, PHYS ST S-B, 216(1), 1999, pp. 547-550
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
547 - 550
Database
ISI
SICI code
0370-1972(199911)216:1<547:TOORLF>2.0.ZU;2-C
Abstract
In addition to broad photoluminescence (PL) bands at 3.2 and 2.8 eV, Mg-dop ed GaN also exhibits a characteristic red PL band centered around 1.75 eV. Using optically detected magnetic resonance (ODMR), a deep defect with an i sotropic g-value of 2.001 and a linewidth of 5 mT is found to be responsibl e for the red luminescence. Various shallow and deep donors are also found to participate in this radiative transition. The results are compared to th e ODMR of n-type GaN.