Electrical properties of the Si implantation in Mg doped p-GaN

This work performs Si ion implantation to activate and convert the electric al conduction of p-GaN films from p-type to n-type. Multiple implantation m ethod is used to form a uniform Si implanted region in the p-type GaN epita xial layer. Implantation energies for the multiple implantation are 10, 100 , and 200 keV. The implantation dose is 5 x 10(15) cm(2) for each implantat ion energy. After implantation, the samples were annealed in an N-2 ambient for different annealing temperatures and annealing times. The activation e fficiency reaches as high as 20% when annealing the sample at 1000 degrees C,. The carrier activation energy is about 720 meV. The low activation ener gy indicates that the hopping process mechanism is the dominant mechanism f or the activation of the Si implant in p-GaN. In addition, the rectifying I -V characteristic of the p-n GaN diode is also examined.