Authors
Citation
M. Kappers et al., Doping of GSMBE-grown gallium nitride using silane, PHYS ST S-B, 216(1), 1999, pp. 615-618
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972
→ ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
615 - 618
Database
ISI
SICI code
0370-1972(199911)216:1<615:DOGGNU>2.0.ZU;2-W
Abstract
Silicon doping of GaN from silane (0.1% SiH4 in Hz) has been demonstrated f
or gas-source molecular beam epitaxy (GSMBE) using ammonia as the nitrogen
source. Mass spectroscopy (SIMS) data reveal that by adjusting the silane f
lux and/or the growth rate (i.e. Ga nux), silicon doping can be achieved ov
er a range from 5 x 10(16) to 1 x 10(19) cm(-3). Undoped samples were semi-
insulating, while all Si-doped GaN samples show n-type conductivity with ty
pical Hall mobility of 225 cm(2)/Vs at n = 1 x 10(17) cm(-3).