We report quantitative ERD (Elastic Recoil Detection) measurements for the
determination of the composition and distribution of the elements in nitrid
e heterostructures. The investigated samples were MOCVD (molecular chemical
vapor deposition) and PIMBE (plasma induced molecular beam epitaxy) grown
HEMT (high electron mobility transistor) structures from Cornell University
. We present the measured Al distribution parallel to the growth direction
of AlxGa1-xN layers of a thickness of about 10 to 30 nm and an Al concentra
tion of x = 0.1 to 0.7. The results are compared with HRXRD (high resolutio
n X-ray diffraction) measurements.