Phonons in hexagonal InN. Experiment and theory

Citation
Vy. Davydov et al., Phonons in hexagonal InN. Experiment and theory, PHYS ST S-B, 216(1), 1999, pp. 779-783
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
216
Issue
1
Year of publication
1999
Pages
779 - 783
Database
ISI
SICI code
0370-1972(199911)216:1<779:PIHIEA>2.0.ZU;2-3
Abstract
We present the results of a detailed study of the first- and second-order R aman scattering and IR reflection from hexagonal InN layers grown on (0001) and (1 (1) over bar 02) sapphire substrates. All six Raman active optical phonons were measured and assigned: E-2(low) at 87 cm(-1), E-2(high) at 488 cm(-1), A(1)(TO) at 447 cm(-1), E-1(TO) at 476 cm(-1), A(1)(LO) at 586 cm( -1), and E-1(LO) at 593 cm(-1). The static dielectric constants of InN for the ordinary and extraordinary directions were estimated to be epsilon(perp endicular to 0) = 13.1 and epsilon(\\0) = 14.4, respectively. The phonon di spersion curves and phonon density-of-state function for hexagonal InN were calculated by scanning throughout the BZ.