Large magnetoresistance ratio in ferromagnetic single-electron transistorsin the strong tunneling regime

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tun nel resistances are smaller than the quantum resistance can be investigated . Beyond the low-order sequential tunneling and cotunneling regimes, a larg e magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy , the magnetoresistance ratio is only slightly enhanced.