Dislocation spectroscopy of crystals

A new method of studying the energy characteristics of dislocations is prop osed, which is based on the investigation of the interaction of moving disl ocations with purposefully introduced electronic and hole centers. A study has been made of KCl, NaCl, KBr, LiF, and KI alkali halide crystals contain ing electronic F and hole V-K and Me++ (Cu++, Ag++, Tl++, In++) centers. In vestigation of the temperature dependence of the dislocation interaction wi th the F centers permitted determination of the position of the dislocation -induced electronic band (DEB) in the band diagram of the crystal. In KCl, the DEB is separated by approximate to 2.2 eV from the conduction-band mini mum. It is shown that dislocations transport holes from the centers lying b elow the dislocation-induced hole band (DHB) (X+, In++, Tl++, V-K) to those above the DHB (the Cu+ and Ag+ centers). Such a process is temperature ind ependent. The DHB position in the crystal band diagram has been determined; in KCl it is separated by approximate to 1.6 eV from the valence-band top. The effective radii of the dislocation interaction with the electronic F a nd hole X+, V-K, and Tl++ centers have been found. (C) 1999 American Instit ute of Physics. [S1063-7834(99)00812-6].