Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation

Authors
Kozlovskii, VV Kozlov, VA
Citation
Vv. Kozlovskii et Va. Kozlov, Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation, SEMICONDUCT, 33(12), 1999, pp. 1265-1266
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
12
Year of publication
1999
Pages
1265 - 1266
Database
ISI
SICI code
1063-7826(199912)33:12<1265:DOHISA>2.0.ZU;2-7
Abstract
The distribution of hydrogen in Si and SiC following high-temperature proto n irradiation (T-irr=20-700 degrees C) is studied by secondary-ion mass spe ctrometry. It is shown that the hydrogen concentration profile in SiC depen ds weakly on irradiation temperature. In Si appreciable alteration of the c oncentration profile is observed already at T(irr)similar or equal to 300 d egrees C, and the profile completely loses its concentration gradient at T( irr)similar or equal to 700 degrees C. (C) 1999 American Institute of Physi cs. [S1063-7826(99)0112-X].