Position of the Fermi level on an indium arsenide surface treated in sulfur vapor

Authors
Bezryadin, NN Tatokhin, EA Budanov, AV Linnik, AV Arsent'ev, IN
Citation
Nn. Bezryadin et al., Position of the Fermi level on an indium arsenide surface treated in sulfur vapor, SEMICONDUCT, 33(12), 1999, pp. 1301-1303
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
12
Year of publication
1999
Pages
1301 - 1303
Database
ISI
SICI code
1063-7826(199912)33:12<1301:POTFLO>2.0.ZU;2-F
Abstract
The characteristic features of the formation kinetics of In2S3 layers on in dium arsenide substrates by heterovalent substitution are studied. The acti vation energies of two steps in this process are separated and determined. The variation of the position of the Fermi level on an InAs surface during treatment in sulfur vapor is recorded by measuring the thermodynamic work f unction using the Kelvin probe method. (C) 1999 American Institute of Physi cs. [S1063-7826(99)01012-1].