Effect of gamma irradiation on the photoluminescence kinetics of porous silicon

Authors
Agekyan, VF Stepanov, YA Emtsev, VV Lebedev, AA Poloskin, DS Remenyuk, AD
Citation
Vf. Agekyan et al., Effect of gamma irradiation on the photoluminescence kinetics of porous silicon, SEMICONDUCT, 33(12), 1999, pp. 1315-1317
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
12
Year of publication
1999
Pages
1315 - 1317
Database
ISI
SICI code
1063-7826(199912)33:12<1315:EOGIOT>2.0.ZU;2-5
Abstract
The effect of gamma irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity a nd decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electro ns and holes via tunneling. The gamma irradiation of porous silicon leads t o a greater dispersion of the decay time. (C) 1999 American Institute of Ph ysics. [S1063-7826(99)01312-5].