Photodetectors based on osmium-doped silicon

Authors
Yunusov, MS Muminov, RA Nurkuziev, G Gapparov, N Kholboev, A
Citation
Ms. Yunusov et al., Photodetectors based on osmium-doped silicon, SEMICONDUCT, 33(12), 1999, pp. 1318-1319
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
12
Year of publication
1999
Pages
1318 - 1319
Database
ISI
SICI code
1063-7826(199912)33:12<1318:PBOOS>2.0.ZU;2-O
Abstract
Osmium-doped silicon photodetectors with a low control voltage have been co nstructed. The n-type Si was chosen as the initial material. The silicon wa s doped with osmium using a diffusion method. The characteristics of these structures are studied at 300 K. (C) 1999 American Institute of Physics. [S 1063-7826(99)01412-X].