Conduction and valence band offsets in GaAlAs/GaAs/GaAlAs quantum wells from photo-luminescence and deep level transient spectroscopy under hydrostatic pressure
Ak. Saxena, Conduction and valence band offsets in GaAlAs/GaAs/GaAlAs quantum wells from photo-luminescence and deep level transient spectroscopy under hydrostatic pressure, SOL ST COMM, 113(4), 1999, pp. 201-206
It is shown that deep level transient spectroscopy at low temperatures and
under hydrostatic pressure on MBE grown GaAlAs/GaAs/GaAlAs quantum wells us
ing Au Schottky barrier diodes combined with photo-luminescence (PL) measur
ements provides a powerful tool for determining the conduction and valence
band offsets if the well is considered as a 'giant' trap having characteris
tics very different from a normal trap. The conduction and valence band off
sets have been determined to be 72 and 28% of GaAs/GaAlAs forbidden energy
band gap difference as determined by PL measurements on samples with varyin
g well thickness for the same GaAlAs compositions of the binding layers. (C
) 1999 Elsevier Science Ltd. All rights reserved.