Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organ ic vapor-phase epitaxy grown Si-doped n-GaAs were measured in the doping ra nge of 6 x 10(15)-1.5 x10(18) cm(-3). These results are compared with the e xperimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G . Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the me asured data and the breakdown voltages by Sze and Gibbons in the high dopin g concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons, The breakdown v oltage at higher doping concentration will be useful for the design and dev elopment of GaAs switching devices and the emitter-base region of bipolar t ransistors. (C) 1999 Elsevier Science Ltd. All rights reserved.