MOCVD growth of strained multiple quantum well structure for 1.3 mu m InAsP/InP laser diodes

in this article, we describe the growth and characterization for 1.3 mu m I nAsPiInP strained multiple quantum well (SMQW) laser diodes (LDs) with sepa rate confinement heterostructure grown at 580 degrees C by metalorganic che mical vapor deposition. The grown strained single quantum well (SSQW) stack and strained multiple quantum well (SMQW) structures are characterized usi ng double-crystal X-ray diffraction and photoluminescence (PL) to confirm t he structural and optical qualities for practical device applications. The InAsP/InP SSQW stack grown at 580 degrees C appears to be extremely abrupt, uniform, free of misfit dislocations and narrow PL half width. Although th e InAsP/ InP SMQWs grown at 580 degrees C maintain its structural integrity throughout the deposition sequence, the slightly broader PL half width for InAsP/InP SMQW structure is attributed to the dislocations resulted from a large net strain, Laser emission can be achieved by using the InAsP/InP SM QWs and the lasing wavelength is in a good agreement with our designed stru cture. The experimental data of broad-area and ridge waveguide LDs are desc ribed in detail. (C) 1999 Elsevier Science Ltd. All rights reserved.