Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs

Authors
Collaert, N De Meyer, K
Citation
N. Collaert et K. De Meyer, Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs, SOL ST ELEC, 43(12), 1999, pp. 2173-2180
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
12
Year of publication
1999
Pages
2173 - 2180
Database
ISI
SICI code
0038-1101(199912)43:12<2173:EOTGOT>2.0.ZU;2-3
Abstract
The effect of the Ge-concentration on the subthreshold behaviour of vertica l Si/Si1-xGex pMOSFETs and of complementary Si1-xGex/Si nMOSFETs is investi gated by using an analytical model, which includes thermioonic emission acr oss the hetero-barrier. It is shown that inclusion of Si1-xGex and strained Si in the source region of the pMOSFET and nMOSFET respectively, suppresse s the subthreshold slope roll-up substantially and lowers the leakage curre nt of even the smallest devices with channel lengths down to 50 nm. (C) 199 9 Elsevier Science Ltd. All rights reserved.