On 1/f(gamma) noise in semiconductor devices

Authors
Lee, JI Brini, J Chovet, A Dimitriadis, CA
Citation
Ji. Lee et al., On 1/f(gamma) noise in semiconductor devices, SOL ST ELEC, 43(12), 1999, pp. 2181-2183
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
12
Year of publication
1999
Pages
2181 - 2183
Database
ISI
SICI code
0038-1101(199912)43:12<2181:O1NISD>2.0.ZU;2-V
Abstract
Applying a thermal activation model, we show that the power index gamma of low frequency noise(1/f(gamma)) in semiconductor structures can often be di rectly related to the ratio of thermal energy and a characteristic energy o f the trap distribution, when there is a significant band tail or band bend ing. Some examples are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.