Flicker noise hy random walk of electrons at the interface in nonideal Schottky diodes

Authors
Lee, JI Brini, J Chovet, A Dimitriadis, CA
Citation
Ji. Lee et al., Flicker noise hy random walk of electrons at the interface in nonideal Schottky diodes, SOL ST ELEC, 43(12), 1999, pp. 2185-2189
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
12
Year of publication
1999
Pages
2185 - 2189
Database
ISI
SICI code
0038-1101(199912)43:12<2185:FNHRWO>2.0.ZU;2-N
Abstract
An explanation of low frequency 1/f noise in nonideal Schottky barrier diod es is presented where the current fluctuation is attributed to the random w alk of electrons at the metal-semiconductor interface via modulation of the barrier height. The experimental results on TiN/n-Si Schottky diodes have been successfully analysed to give useful information on the interface stat es. (C) 1999 Elsevier Science Ltd. All rights reserved.