Aluminum multiple implantations in 6H-SiC at 300 K

A complete study was driven in order to elaborate a p(+)-n junction in BH-S IC. The chosen techniques were aluminum multiple implantations, followed wi th high-temperature furnace annealings. First, we had to configure the furn ace geometry aiming at optimizing the annealed material characteristics. We evidenced the beneficial effects of a SIC plate inside the furnace reactor on the surface stoichiometry of the annealed sample, and also on its cryst al reordering velocity. Then, the fivefold aluminum implantation necessary for the 0.5 mu m depth p(+)-region creation has been studied, especially th e energy order influence on the junction steepness. It was found that the i ncreasing energy order implantations lead to a channeling effect less impor tant, a deeper amorphized zone. and a defect interface at volume more abrup t. After an annealing performed with the optimized furnace, the best electr ical activation obtained equated the degree of ionization even though the a s-implanted material was totally amorphized up to 0.25 mu m. Moreover, the three different multiple implantations investigated during this study induc ed different amorphized layer depths, despite they all have the same total aluminum dose with the same highest energy value, All along the paper, we p ropose to explain this fact. This is probably due to distinct mechanisms in volved in the amorphization phenomena, which were tentatively estimated wit h a specific Monte Carlo simulator recently developed. (C) 1999 Elsevier Sc ience Ltd. All rights reserved.