The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si :Si0.9Ge0.1 : Si substrates

Authors
Riley, LS Hall, S Bonar, JM
Citation
Ls. Riley et al., The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si :Si0.9Ge0.1 : Si substrates, SOL ST ELEC, 43(12), 1999, pp. 2247-2250
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
12
Year of publication
1999
Pages
2247 - 2250
Database
ISI
SICI code
0038-1101(199912)43:12<2247:TSOGLO>2.0.ZU;2-3
Abstract
A simple technique leading to the measurement of minority carrier lifetimes of UHV compatible LPCVD Si and SiGe by C-t depth profiling of Metal:Oxide: Si:SiGe:Si structures is reported. A high quality gate oxide is realised by low temperature (< 100 degrees C) plasma anodisation thereby reducing any oxidation effects on the underlying epitaxial layer quality, Capacitance re sponse times were observed for an impurity concentration of similar to 2.5 x 10(17) cm(-3), giving rise to generation lifetimes of the Si and Si0.9Ge0 .1 of >0.55 and 2.6 mu s respectively, reflective of very high quality epit axial semiconductor material. (C) 1999 Elsevier Science Ltd. All rights res erved.