Stoichiometric Al2O3 films are produced with a pure Prl source in the metal
lic state in an O-2+Ar gas mixture using reactive d.c. magnetron sputtering
. Substrates as large as 70 x 100 cm(2) are uniformly coated at room temper
ature while moving in front of the cathode. The key to the success lies in
utilizing a sufficiently high working gas pressure and a sufficiently large
source-to-substrate distance. Monte Carlo simulations are used to estimate
the latter. The process is extremely stable, and despite the large target
size, no arcing is detected. (C) 1999 Elsevier Science S.A. All rights rese
rved.