Chemical structure of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study

We report on a study of the compositional and chemical properties of films deposited on silicon by quadrupoled Nd:YAG pulsed laser ablation of a ceram ic AIN target. The ablation has been performed either in a vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the fi lms on their chemical structure was investigated. The binding energy of the Al 2p, N Is and O Is core electrons indicates the formation of near-stoich iometric aluminum nitride in films grown in a vacuum (10(-7)-10(-5) mbar), whereas in films grown under an oxygen-partial pressure of 0.1 mbar, only a luminum oxide formation was observed. (C) 1999 Elsevier Science S.A. All ri ghts reserved.