Heteroepitaxial growth of complex-oxide films from a self-organized systemformed in a gas-discharge plasma

Citation
Vm. Mukhortov et al., Heteroepitaxial growth of complex-oxide films from a self-organized systemformed in a gas-discharge plasma, TECH PHYS, 44(12), 1999, pp. 1477-1480
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS
ISSN journal
10637842 → ACNP
Volume
44
Issue
12
Year of publication
1999
Pages
1477 - 1480
Database
ISI
SICI code
1063-7842(199912)44:12<1477:HGOCFF>2.0.ZU;2-N
Abstract
New experimental data on the characteristic features of the synthesis and c rystallization of films of solid solutions of lead zirconate-titanate, depo sited by means of rf diode sputtering of ceramic targets, are presented. Su ch a deposition system possesses threshold states, transition through which leads to a qualitative change in the processes occurring in the system and to the appearance of self-organization effects. The basic feature of this change is determined by the appearance of a new structured system, consisti ng of the sputtered particles and particles formed in the plasma, in the pl asma of an rf discharge. (C) 1999 American Institute of Physics. [S1063-784 2(99)01712-2].