Analysis of the negative ion characteristics of O-2 supermagnetron plasma for submicron etching use

Citation
H. Kinoshita et al., Analysis of the negative ion characteristics of O-2 supermagnetron plasma for submicron etching use, VACUUM, 55(3-4), 1999, pp. 219-222
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
55
Issue
3-4
Year of publication
1999
Pages
219 - 222
Database
ISI
SICI code
0042-207X(199912)55:3-4<219:AOTNIC>2.0.ZU;2-M
Abstract
In supermagnetron plasma generations using the electronegative gas O-2 and the electropositive gas Ar, electrical properties such as self-bias voltage and rf voltage for both gases were measured. In the measurement of self-bi as voltage, that of O-2 was about + 15 V higher than that of Ar; however, r f voltages for both O-2 and Ar were almost the same. From these experiments , the existence of negative ions in O-2 supermagnetron plasma was confirmed . Furthermore, the mechanism of the self-bias voltage shift in a positive d irection was analyzed by estimating their plasma and sheath potential diffe rences. Using this O-2 supermagnetron plasma, quartermicron resist patterns were etched with negligible side-wall etching. (C) 1999 Elsevier Science L td. All rights reserved.