BISTABLE DEFECT SYSTEMS IN CDF2-M3+ (M=AL, GA, IN) AND THEIR PHOTOREFRACTIVE PROPERTIES

Authors
Citation
Cr. Fu et Ks. Song, BISTABLE DEFECT SYSTEMS IN CDF2-M3+ (M=AL, GA, IN) AND THEIR PHOTOREFRACTIVE PROPERTIES, Journal of physics. Condensed matter, 9(17), 1997, pp. 3575-3581
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
17
Year of publication
1997
Pages
3575 - 3581
Database
ISI
SICI code
0953-8984(1997)9:17<3575:BDSIC(>2.0.ZU;2-L
Abstract
On the basis of the method recently used in the study of the trivalent impurity state in CdF2:M3+ (M: In, Ga, Sc and Y), the structure of th e electron trapped at an Al3+ centre in CdF2 is determined. Although a bistable system is obtained, due to the locally soft lattice around t he Al3+ ion the localized compact state has higher energy than the del ocalized state. The excited p-like states and the oscillator strengths for the optical transition between the sand p-like states in the thre e bistable systems (with Al, Ga, In) are evaluated. The changes in the refractive index as the systems change from localized to delocalized states are estimated, and the results are discussed in the context of the recently reported data on the photorefractive properties of In and Ga centres in CdF2.