Electric field effects on the confinement properties of GaN/AlxGa1-xN zincblende and wurtzite nonabrupt quantum wells

Authors
Wang, H Farias, GA Freire, VN
Citation
H. Wang et al., Electric field effects on the confinement properties of GaN/AlxGa1-xN zincblende and wurtzite nonabrupt quantum wells, BRAZ J PHYS, 29(4), 1999, pp. 670-674
Citations number
29
Categorie Soggetti
Physics
Journal title
BRAZILIAN JOURNAL OF PHYSICS
ISSN journal
01039733 → ACNP
Volume
29
Issue
4
Year of publication
1999
Pages
670 - 674
Database
ISI
SICI code
0103-9733(199912)29:4<670:EFEOTC>2.0.ZU;2-D
Abstract
We investigate the confinement properties of GaN/AlxGa1-xN zincblende and w urtzite nonabrupt quantum wells (QWs) in an electric field. It is shown tha t their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Angstrom wide GaN/Al0.3G a0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric held intensities of the order of 500 kV/cm. In all cases, the electric fiel d effects in GaN/AlxGa1-xN wurtzite QWs are stronger than in similar zincbl ende QWs.