A theoretical study of optical properties in narrow gap semiconductor quant
um wells has been developed using an 8x8 Kane Hamiltonian. The interband tr
ansition selection rules have been obtained and a detailed description of t
he interband absorption using Voight and Faraday scattering configurations
has been given. Interesting effects produced by the intraband admixture, su
ch as spin-flip transitions, will be discussed. The complementation of meas
urements using different scattering configurations will be analyzed.