Spin-aip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures

We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostruc ture with layers of Cd1-xMnxTe in which the magnetic ions Mn2+ interact str ongly with the conducting electrons via, the s-d exchange interaction. Ther mal fluctuations of Mn2+ magnetic moments cause spin-dependent electron sca ttering that modifies the characteristic current-voltage curve. Our calcula tion shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.