Electronic structure in narrow-gap quantum dots

In this work we calculated the electronic structure of spherical quantum do ts based on zincblend semiconductor compounds. The strong conduction-valenc e band coupling in this class of semiconductors induces a strong mixing of the electronic states which requires a theoretical model to properly take i nto acount these effects. We have used a full 8x8 Kane Hamiltonian in order to include the strong admixture and study the set of symetries associated with these electronic states and their angular momentum in this central for ce problem. As an application, we have calculated the electronic structure in narrow-gap HgCdTe, InSb and CdTe quantum dots.