High temperature behavior of subpicosecond electron transport transient in3C-and 6H-SiC

A study of the subpicosecond high-field electron transport transient in 3C- and 6H-SiC polytypes at high lattice temperatures is performed. Electric f ield intensities up to 1000 kV/cm and lattice temperatures of 300, 673, and 1073 K are considered. It is shown that the transient regime behavior depe nds on the electric field intensity as well as on the lattice temperature, but it is always shorter or of the order of 0.3 ps. For the lowest lattice temperature, an electron velocity overshoot can always occur when the elect ric field intensity is higher than 300 kV/cm, but it decreases and can even disappear when the lattice temperature is raised.