Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55 mu m laser applications

Citation
W. De Carvalho et al., Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55 mu m laser applications, BRAZ J PHYS, 29(4), 1999, pp. 839-842
Citations number
8
Categorie Soggetti
Physics
Journal title
BRAZILIAN JOURNAL OF PHYSICS
ISSN journal
01039733 → ACNP
Volume
29
Issue
4
Year of publication
1999
Pages
839 - 842
Database
ISI
SICI code
0103-9733(199912)29:4<839:MOASPO>2.0.ZU;2-D
Abstract
Zero-Net-Strained (ZNS) InGaAsP/InGaAsP/InP Multi Quantum Wells (MQW) struc tures grown by Low Pressure Metalorganic Vapor Phase Epitaxy for 1.55 mu m laser applications were investigated using atomic force microscopy, photolu minescence spectroscopy and X-ray diffraction. The morphology exhibits a st rong anisotropic and modulated behavior. The photoluminescence spectrum sho ws a broad emission band below the fundamental quantum well transition. The results indicate a strong influence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high efficiency.