ION MIGRATION AND DIELECTRIC EFFECTS IN ALUMINUM-OXIDE FILMS

Authors
RUSSE S LOHRENGEL MM SCHULTZE JW
Citation
S. Russe et al., ION MIGRATION AND DIELECTRIC EFFECTS IN ALUMINUM-OXIDE FILMS, Solid state ionics, 72, 1994, pp. 29-34
Citations number
39
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Solid state ionics → ACNP
ISSN journal
01672738
Volume
72
Year of publication
1994
Part
2
Pages
29 - 34
Database
ISI
SICI code
0167-2738(1994)72:<29:IMADEI>2.0.ZU;2-B
Abstract
Anodic current transients of potentiostatic oxide growth and impedance spectra of thin oxide films on Al show two independent processes: (i) dielectric relaxation, resulting in a frequency dependent dielectric permittivity, with a small activation energy of W=0.1 eV and (ii) an e mission of mobile ions from the interfaces ( W=1.5 eV) as an initial s tep of high field oxide growth.