An accurate bilateral FET model suitable for general nonlinear and power applications

The article introduces a general purpose large-signal functional model of t he MESFET based on DC, S-parameter and nonlinear measurements. Physical con straints incorporated in the constitutive relations guarantee the model con sistency in large-signal operation and improve the reliability of the param eter extraction process. The model accounts for low frequency dispersion, t hird-order intermodulation, forward and reverse (breakdown) gate conduction , and temperature effects. It is bilateral in the sense that it is valid fo r positive, zero, and negative drain-source voltages, It can be coupled to a harmonic-balance algorithm for an efficient simulation of any kind of non linear circuit or subsystem, including power amplifiers, resistive mixers, and switches. Extensive comparisons with experimental results are presented for two different devices. (C) 2000 John Wiley & Sons, Inc.