Ultrafast infrared studies of the reaction mechanism of silicon-hydrogen bond activation by eta(5)-CpV(CO)(4)

Citation
Pt. Snee et al., Ultrafast infrared studies of the reaction mechanism of silicon-hydrogen bond activation by eta(5)-CpV(CO)(4), J PHYS CH A, 103(49), 1999, pp. 10426-10432
Citations number
57
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY A
ISSN journal
10895639 → ACNP
Volume
103
Issue
49
Year of publication
1999
Pages
10426 - 10432
Database
ISI
SICI code
1089-5639(199912)103:49<10426:UISOTR>2.0.ZU;2-H
Abstract
The photochemical Si-H bond activation reaction by the group VB, d(4) organ ometallic compound eta(5)-CpV(CO)(4) (Cp = C5H5) has been studied in neat t riethylsilane under ambient conditions, The spectral evolutions of the meta l-bended CO stretching bands were monitored from 300 fs to 800 ps following UV photolysis using femtosecond pump-probe spectroscopic methods. The reac tive intermediates observed on the ultrafast time scale were also studied u sing density functional theory as well as ab initio quantum chemical modeli ng. It was found that photolysis of vanadium tetracarbonyl resulted in the formation of tricarbonyls in either the singlet or triplet electronic state following CO loss. The subsequent reaction was partitioned into two pathwa ys by the initial solvation of the tricarbonyls through the Si-H bond or an ethyl group of the solvent molecule. Knowledge of the elementary reaction steps including changes in molecular morphology and electronic multiplicity allowed a comprehensive description of the chemical reactivity.