A nanometer-scale recording technique was demonstrated on N-(3-nitrobenzyli
dene) p-phenylenediamine (NBPDA) organic thin films with a scanning tunneli
ng microscope (STM). NBPDA thin films were fabricated by vacuum thermal dep
osition. The results of ultraviolet-visible absorption and infrared transmi
ssion spectra showed that the structure of the NBPDA film was the same as t
hat of NBPDA crystal. An atomic force microscope was utilized to characteri
ze the surface morphology of the NBPDA film. Data were recorded by applying
voltage pulses between the tip and the substrate. The current-voltage char
acteristics measured by the STM indicated that the local electrical propert
y changed from an insulating property into a metallic property after the da
ta were written. Data marks, 1.4 nm in diameter, corresponded to a data sto
rage density of 10(12) bits/cm(2). A preliminary calculation was presented
to explain the recording mechanism. (C) 1999 American Vacuum Society. [S073
4-211X(99)01906-X].