Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation

The etching characteristics of AlxGa1-xN grown by metal-organic chemical-va por deposition were investigated in an inductively coupled plasma (ICP) rea ctive ion etching system using Cl-2/Ar gas mixtures. Etch rate variations w ith substrate bias voltage, ICP coil power, chamber pressure, Cl-2/Ar gas m ixture ratios, and gas flow rates were investigated. The optimum chamber pr essure for etching was found to be dependent on both the substrate bias vol tage and ICP coil power. Anger electron spectroscopy analysis showed that: the stoichiometries of the etched Al0.22Ga0.78N surfaces were identical, in dependent of the etching conditions. Etching results were successfully appl ied to form highly anisotropic and smooth facets in GaN/InGaN/AlGaN heteros tructure laser materials. (C) 1999 American Vacuum Society. [S0754-211X(99) 13506-6].