Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

An effective gate recess etch process has been applied to AlGaN/GaN modulat ion-doped field-effect transistors (MODFETs), utilizing low power Cl-2 reac tive ion etching. In comparison to GaAs-based materials, GaN shows a greate r robustness to ion damage under ion bombardment at very low ion energies ( <70 V). It suggests that a viable gate recess etch process is possible. Rec essed gate AlGaN/GaN MODFETs with gate to drain breakdown higher than -80 V have been demonstrated with an optimized lower power Cl-2 reactive ion etc hing. (C) 1999 American Vacuum Society. [S0734-211X(99)10106-9].