The effect of Coulomb interactions in electron-beam lithography systems are
usually described in terms of the blur induced by stochastic electron-elec
tron interactions. Here, we show both by an efficient Monte Carlo simulatio
n and by a global space-charge model, that the aberrations induced by the l
ensing action of global space charge can be equally significant. For a 4:1
telecentric reduction projection optics operating at 100 kV beam energy and
25 mu A total current, we obtain about 150 nm blur independent of any stoc
hastic effects. The global space-charge model requires less than 5 min comp
utation on a 450 MHz workstation. The aberration coefficients of the global
space-charge-induced lens can be evaluated, and because they scale directl
y with the perveance of the beam, can be used to evaluate the global space-
charge effect over a wide variety of conditions. When the Monte Carlo and g
lobal space-charge models are used together, the stochastic-only portion of
the beam blur can be extracted. (C) 1999 American Vacuum Society. [S0734-2
11X(99)13606-0].