Scattering with angular limitation projection electron-beam lithography (SC
ALPEL) is being developed by Lucent Technologies for sub-130 nm lithography
. The mask fabrication and exposure processes produce mask distortions that
result in pattern placement errors. In order to understand these distortio
ns, and determine how re, reduce them to levels consistent with the error b
udget, structural and heat transfer finite element models have been generat
ed to simulate the mechanical and thermal response of the mask. Tn addition
, sensitivity studies of the distortions due to key design parameters that
may be used to refine the SCALPEL mask configuration have been conducted. (
C) 1999 American Vacuum Society. [S0734-211X(99)09506-2].